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| BB639C/BB659C... Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB639C BB659C/-02V Type BB639C BB659C BB659C-02V Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature (R 5k ) 2 Package SOD323 SCD80 SC79 Configuration single single single LS (nH) 1.8 0.6 0.6 Marking yellow S HH H VR VRM IF Top Tstg 30 35 20 -55 ... 150 -55 ... 150 V mA C 1 Nov-07-2002 BB639C/BB659C... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 36.5 27 2.5 2.4 39 30.2 2.72 2.55 15.3 11.1 42 33.2 3.05 2.75 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 CT/CT 14.2 9.5 Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB639C VR = 1V to 28V , f = 1 MHz, 4 diodes sequence, BB659C/-02V VR = 1V to 28V, f = 1 MHz, 7 diodes sequence , BB659C/-02V Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047 2 Nov-07-2002 Capacitance matching1) rS 0.3 0.5 0.6 2.5 1 2 0.7 - BB639C/BB659C... Diode capacitance CT = f = 1MHz 40 pF 1/C (VR ) Temperature coefficient of the diode 10 -3 30 CT 25 TC C 20 10 -4 15 10 5 10 -5 0 10 0 0 5 10 15 20 V 30 VR VR = 28V 10 3 TA = Parameter 10 3 pA pA 10 2 10 2 IR IR 10 1 10 1 10 0 10 0 -30 -10 10 30 50 70 C 100 10 -1 0 10 TA 3 Reverse current I R = (TA) Reverse current IR = capacitance TCc = (VR ) 10 1 V 10 2 VR (VR) 85C 25C 10 1 V 10 2 VR Nov-07-2002 |
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